| PART |
Description |
Maker |
| BSP317P |
Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-223, RDSon = 4
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP373 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.3 Ohm, 1.7A, NL
SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO211P |
OptiMOS -P Small-Signal-Transistor
Low Voltage MOSFETs - Product Type
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SN7002W |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - SOT323, 60V, 5Ohm, 0.23A
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSS119 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-23, RDSon=6Ohm, 0.17A, LL
|
Infineon
|
| BSP89 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-223, RDSon=6.0 Ohm, 0.36A, LL
|
Infineon
|
| BSS209PW |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-323
OptiMOS -P Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| A223 BSA223SP |
OptiMOS-P Small-Signal-Transistor OptiMOS磷小信号晶体
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SC-75, Ron = 1.2
|
INFINEON[Infineon Technologies AG]
|
| BSD223P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
OptiMOS -P Small-Signal-Transistor
CHOKE RF COATED 1.8UH 10%
|
Infineon Technologies A...
Infineon Technologies AG
Philips Semiconductors
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
